Freescale Semiconductor
Technical Data
Document Number: MD7IC2250N
Rev. 0, 12/2010
RF LDMOS Wideband Integrated
Power Amplifiers
The MD7IC2250N wideband integrated circuit is designed with on--chip
matching that makes it usable from 2000 to 2200 MHz. This multi--stage
structure is rated for 24 to 32 Volt operation and covers all typical cellular
base station modulation formats.
•
Typical Single--Carrier W--CDMA Performance: V
DD
= 28 Volts,
I
DQ1(A+B)
= 80 mA, I
DQ2(A+B)
= 520 mA, P
out
= 5.3 Watts Avg.,
IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal
PAR = 7.5 dB @ 0.01% Probability on CCDF.
Frequency
2110 MHz
2140 MHz
2170 MHz
G
ps
(dB)
31.2
31.1
31.1
PAE
(%)
17.0
16.8
16.8
ACPR
(dBc)
--48.3
--49.3
--50.1
MD7IC2250NR1
MD7IC2250GNR1
MD7IC2250NBR1
2110-
-2170 MHz, 5.3 W AVG., 28 V
SINGLE W-
-CDMA
RF LDMOS WIDEBAND
INTEGRATED POWER AMPLIFIERS
CASE 1618-
-02
TO-
-270 WB-
-14
PLASTIC
MD7IC2250NR1
•
Capable of Handling 10:1 VSWR, @ 32 Vdc, 2140 MHz, 63 Watts CW
Output Power (3 dB Input Overdrive from Rated P
out
)
•
Typical P
out
@ 1 dB Compression Point
≃
54 Watts CW
Features
•
Characterized with Series Equivalent Large--Signal Impedance Parameters
and Common Source S--Parameters
•
On--Chip Matching (50 Ohm Input, DC Blocked)
•
Integrated Quiescent Current Temperature Compensation with
Enable/Disable Function
(1)
•
Integrated ESD Protection
•
Designed for Digital Predistortion Error Correction Systems
•
Optimized for Doherty Applications
•
225°C Capable Plastic Package
•
RoHS Compliant
•
In Tape and Reel. R1 Suffix = 500 Units, 44 mm Tape Width, 13 inch Reel.
V
DS1A
RF
inA
RF
out1
/V
DS2A
CASE 1621-
-02
TO-
-270 WB-
-14 GULL
PLASTIC
MD7IC2250GNR1
CASE 1617-
-02
TO-
-272 WB-
-14
PLASTIC
MD7IC2250NBR1
V
GS1A
V
GS2A
V
GS1B
V
GS2B
Quiescent Current
Temperature Compensation
(1)
Quiescent Current
Temperature Compensation
(1)
V
DS1A
V
GS2A
V
GS1A
RF
inA
NC
NC
NC
NC
RF
inB
V
GS1B
V
GS2B
V
DS1B
1
2
3
4
5
6
7
8
9
10
11
12
14
RF
out1
/V
DS2A
13
RF
out2
/V
DS2B
RF
inB
V
DS1B
RF
out2
/V
DS2B
(Top View)
Note: Exposed backside of the package is
the source terminal for the transistors.
Figure 1. Functional Block Diagram
Figure 2. Pin Connections
1. Refer to AN1977,
Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family
and to AN1987,
Quiescent Current Control
for the RF Integrated Circuit Device Family.
Go to http://www.freescale.com/rf. Select Documentation/Application Notes -- AN1977 or AN1987.
©
Freescale Semiconductor, Inc., 2010. All rights reserved.
MD7IC2250NR1 MD7IC2250GNR1 MD7IC2250NBR1
1
RF Device Data
Freescale Semiconductor
Table 1. Maximum Ratings
Rating
Drain--Source Voltage
Gate--Source Voltage
Operating Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
(1,2)
Input Power
Symbol
V
DSS
V
GS
V
DD
T
stg
T
C
T
J
P
in
Value
--0.5, +65
--0.5, +10
32, +0
-- 65 to +150
150
225
28
Unit
Vdc
Vdc
Vdc
°C
°C
°C
dBm
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 74°C, 5.3 W CW, 2170 MHz
Stage 1, 28 Vdc, I
DQ1(A+B)
= 80 mA
Stage 2, 28 Vdc, I
DQ2(A+B)
= 520 mA
Case Temperature 80°C, 50 W CW, 2170 MHz
Stage 1, 28 Vdc, I
DQ1(A+B)
= 80 mA
Stage 2, 28 Vdc, I
DQ2(A+B)
= 520 mA
Symbol
R
θJC
5.3
1.1
5.0
0.95
Value
(2,3)
Unit
°C/W
Table 3. ESD Protection Characteristics
Test Methodology
Human Body Model (per JESD22--A114)
Machine Model (per EIA/JESD22--A115)
Charge Device Model (per JESD22--C101)
Class
1A (Minimum)
A (Minimum)
II (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology
Per JESD22--A113, IPC/JEDEC J--STD--020
Rating
3
Package Peak Temperature
260
Unit
°C
Table 5. Electrical Characteristics
(T
A
= 25°C unless otherwise noted)
Characteristic
Stage 1 - Off Characteristics
(4)
-
Zero Gate Voltage Drain Leakage Current
(V
DS
= 65 Vdc, V
GS
= 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(V
DS
= 28 Vdc, V
GS
= 0 Vdc)
Gate--Source Leakage Current
(V
GS
= 1.5 Vdc, V
DS
= 0 Vdc)
Stage 1 - On Characteristics
-
Gate Threshold Voltage
(4)
(V
DS
= 10 Vdc, I
D
= 23
μAdc)
Gate Quiescent Voltage
(V
DS
= 28 Vdc, I
DQ1(A+B)
= 80 mA)
Fixture Gate Quiescent Voltage
(V
DD
= 28 Vdc, I
DQ1(A+B)
= 80 mA, Measured in Functional Test)
V
GS(th)
V
GS(Q)
V
GG(Q)
1.2
—
6.0
2.0
2.7
7.0
2.7
—
8.0
Vdc
Vdc
Vdc
I
DSS
I
DSS
I
GSS
—
—
—
—
—
—
10
1
1
μAdc
μAdc
μAdc
Symbol
Min
Typ
Max
Unit
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
3. Refer to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
4. Each side of device measured separately.
(continued)
MD7IC2250NR1 MD7IC2250GNR1 MD7IC2250NBR1
2
RF Device Data
Freescale Semiconductor
Table 5. Electrical Characteristics
(T
A
= 25°C unless otherwise noted)
(continued)
Characteristic
Stage 2 - Off Characteristics
(1)
-
Zero Gate Voltage Drain Leakage Current
(V
DS
= 65 Vdc, V
GS
= 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(V
DS
= 28 Vdc, V
GS
= 0 Vdc)
Gate--Source Leakage Current
(V
GS
= 1.5 Vdc, V
DS
= 0 Vdc)
Stage 2 - On Characteristics
-
Gate Threshold Voltage
(1)
(V
DS
= 10 Vdc, I
D
= 150
μAdc)
Gate Quiescent Voltage
(V
DS
= 28 Vdc, I
DQ2(A+B)
= 520 mA)
Fixture Gate Quiescent Voltage
(V
DD
= 28 Vdc, I
DQ2(A+B)
= 520 mA, Measured in Functional Test)
Drain--Source On--Voltage
(1)
(V
GS
= 10 Vdc, I
D
= 1 Adc)
V
GS(th)
V
GS(Q)
V
GG(Q)
V
DS(on)
1.2
—
5.5
0.1
2.0
2.7
6.3
0.24
2.7
—
7.5
1.2
Vdc
Vdc
Vdc
Vdc
I
DSS
I
DSS
I
GSS
—
—
—
—
—
—
10
1
1
μAdc
μAdc
μAdc
Symbol
Min
Typ
Max
Unit
Functional Tests
(2,3)
(In Freescale Wideband 2110--2170 Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQ1(A+B)
= 80 mA,
I
DQ2(A+B)
= 520 mA, P
out
= 5.3 W Avg., f = 2170 MHz, Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01%
Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @
±5
MHz Offset.
Power Gain
Power Added Efficiency
Adjacent Channel Power Ratio
Input Return Loss
G
ps
PAE
ACPR
IRL
30.0
15.0
—
—
31.1
16.8
--50.1
--14
34.0
—
--47.0
--9
dB
%
dBc
dB
Typical Broadband Performance
(In Freescale Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQ1(A+B)
= 80 mA, I
DQ2(A+B)
= 520 mA,
P
out
= 5.3 W Avg., Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR
measured in 3.84 MHz Channel Bandwidth @
±5
MHz Offset.
Frequency
2110 MHz
2140 MHz
2170 MHz
G
ps
(dB)
31.2
31.1
31.1
PAE
(%)
17.0
16.8
16.8
ACPR
(dBc)
--48.3
--49.3
--50.1
IRL
(dB)
--9
--11
--14
1. Each side of device measured separately.
2. Part internally matched both on input and output.
3. Measurement made with device in straight lead configuration before any lead forming operation is applied.
(continued)
MD7IC2250NR1 MD7IC2250GNR1 MD7IC2250NBR1
RF Device Data
Freescale Semiconductor
3
Table 5. Electrical Characteristics
(T
A
= 25°C unless otherwise noted)
(continued)
Characteristic
Symbol
Min
Typ
Max
Unit
Typical Performance
(In Freescale Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQ1(A+B)
= 80 mA, I
DQ2(A+B)
= 520 mA,
2110--2170 MHz Bandwidth
P
out
@ 1 dB Compression Point, CW
IMD Symmetry @ 50 W PEP, P
out
where IMD Third Order
Intermodulation
30 dBc
(Delta IMD Third Order Intermodulation between Upper and Lower
Sidebands > 2 dB)
VBW Resonance Point
(IMD Third Order Intermodulation Inflection Point)
Quiescent Current Accuracy over Temperature
(1,2)
with 4.7 kΩ Gate Feed Resistors (--30 to 85°C)
Gain Flatness in 60 MHz Bandwidth @ P
out
= 5.3 W Avg.
Gain Variation over Temperature
(--30°C to +85°C)
Output Power Variation over Temperature
(--30°C to +85°C)
Stage 1
Stage 2
P1dB
IMD
sym
—
—
54
16
—
—
W
MHz
VBW
res
∆I
QT
—
70
—
MHz
%
—
—
—
—
—
1.5
5.0
0.1
0.028
0.028
—
—
—
—
—
dB
dB/°C
dB/°C
G
F
∆G
∆P1dB
1. Each side of device measured separately.
2. Refer to AN1977,
Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family
and to AN1987,
Quiescent Current Control
for the RF Integrated Circuit Device Family.
Go to http://www.freescale.com/rf.Select Documentation/Application Notes -- AN1977 or
AN1987.
MD7IC2250NR1 MD7IC2250GNR1 MD7IC2250NBR1
4
RF Device Data
Freescale Semiconductor
V
D1A
V
G2A
V
G1A
R1
C18
C9
CUT OUT AREA
C16
C21
C11
R2
C1
C12 C5
C7
C14
C3
V
D2
C20
C17
C19
R3
V
G1B
R4
V
G2B
V
D1B
C2
C13 C6
C10
MD7IC2250N
Rev. 2
C4
C15
C8
V
D2
Figure 3. MD7IC2250NR1(GNR1)(NBR1) Test Circuit Component Layout
Table 6. MD7IC2250NR1(GNR1)(NBR1) Test Circuit Component Designations and Values
Part
C1, C2, C3, C4
C5, C6, C7, C8
C9, C10
C11
C12, C13
C14, C15, C16, C17, C18, C19
C20
C21
R1, R2, R3, R4
PCB
Description
10
μF
Chip Capacitors
5.6 pF Chip Capacitors
2.0 pF Chip Capacitors
33 pF Chip Capacitor
1.0
μF
Chip Capacitors
4.7
μF
Chip Capacitors
1.8 pF Chip Capacitor
1.5 pF Chip Capacitor
4.7 kΩ Chip Resistors
0.020″,
ε
r
= 3.5
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MD7IC2250NR1 MD7IC2250GNR1 MD7IC2250NBR1
RF Device Data
Freescale Semiconductor
5
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